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DATA SHEET
SILICON TRANSISTOR
2SC3809
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE
FEATURES
* The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating
PACKAGE DIMENSIONS (in millimeters)
5.0 MIN.
1.25 0.1
3.5 +0.3 5.0 MIN. -0.2 2
0.6 0.1
current range. * Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits.
3
4
5.0 MIN.
1 5
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance (junction to case) Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC PT Rth (j-c) Tj Tstg
RATINGS 20 12 3 100/unit 300/unit 90/unit 200 -65 to +200
UNIT V V V mA mW C/W C C
(#492C) PIN CONNECTIONS 2 3 C2 C1 4 B1 E 5 1 B2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain hFE Ratio Difference of Base to Emitter Voltage Gain Bandwidth Product Feedback Capacitance SYMBOL BVCBO BVEBO BVCEO ICBO IEBO hFE hFE1/hFE2
Note 1
TEST CONDITIONS IC = 100 A IE = 100 A, IC = 0 IC = 1 mA, RBE = VCB = 10 V, IC = 0 VEB = 1 V, IE = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz
MIN. 20 3 12
TYP.
MAX.
UNIT V V V
1.0 1.0 50 0.6 250 1.0 30 6 7 0.75 1.0
A A
VBE (on) fT Note 2 Cre Note 3
mV GHz pF
Notes 1. hFE1 is the smaller hFE value of the 2 transistors. 2. Measured using a single-type device (equivalent to the 2SC3603). 3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to the guard terminal of the bridge.
Document No. P11697EJ1V0DS00 (1st edition) Date Published July 1996 P Printed in Japan
(c)
2.0 MAX.
0.1 +0.06 -0.03
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
0.6 0.1
1996
2SC3809
REGARDING CLEANSING
Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain. If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration at the metalized area of the transistor. You can use alcohol as a solvent. Do not apply ultra-sonic-cleaning on this product.
TYPICAL CHARACTERISTICS (TA = 25 C)
FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 f = 1.0 MHz
Cre - Feedback Capacitance - pF
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V
1
hFE - DC Current Gain
100
50
0.5
20
0.3 0 0.5 1 2 5 10 20 30 VCB - Collector to Base Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10
fT - Gain Bandwidth Product - GHz
10 0.5
1
5
10
50
IC - Collector Current - mA
5.0 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 30 IC - Collector Current - mA
2
2SC3809
[MEMO]
3
2SC3809
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
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